GT35J321 2008-03-26 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT35J321 fourth-generation igbt current resonance inverter switching applications z enhancement mode z high speed: t f = 0.19 s (typ.) (i c = 50 a) z low saturation voltage: v ce (sat) = 1.9 v (typ.) (i c = 50 a) z frd included between emitter and collector z toshiba package name: to-3p(n)is absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector ? emitter voltage v ces 600 v gate? emitter voltage v ges 25 v @ tc = 100c 18 collector current (dc) @ tc = 25c i c 37 a collector current (pulse) i cp 100 a dc i f 20 diode forward current pulse i fp 40 a @ tc = 100c 30 collector power dissipation @ tc = 25c p c 75 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, etc. ) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance (igbt) r th (j-c) 1.67 c/w thermal resistance (diode) r th (j-c) 3.2 c/w equivalent circuit marking unit: mm jedec ? jeita ? toshiba 2-16f1a weight: 5.8 g (typ.) GT35J321 toshiba lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code) 1. gate 2. collector 3. emitter gate emitter collector
GT35J321 2008-03-26 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 25 v, v ce = 0 v D D 500 na collector cut ? off current i ces v ce = 600 v, v ge = 0 v D D 1.0 ma gate-emitter cut-off voltage v ge (off) i c = 50 ma, v ce = 5 v 3.0 D 6.0 v collector-emitter saturation voltage v ce (sat) i c = 50 a, v ge = 15 v D 1.9 2.3 v input capacitance c ies v ce = 10 v, v ge = 0 v, f = 1 mhz D 2500 D pf rise time t r D 0.24 D turn-on time t on D 0.33 D fall time t f D 0.19 0.32 switching time turn-off time t off resistive load v cc = 300 v, i c = 50 a v gg = 15 v, r g = 39 (note 1) D 0.51 D s diode forward voltage v f i f = 15 a, v ge = 0 v D D 2.0 v reverse recovery time t rr i f = 15 a, di / dt = ? 100 a / s D D 0.2 s note 1: switching time measurement circuit and input/output waveforms 10% 90% v ge v ce i c t d (off) t of f t r t on 0 0 t f 10% 10% 90% 90% r g v cc r l 0
GT35J321 2008-03-26 3 0 1 2 3 4 5 8 20 15 v ge = 7 v 9 10 100 0 20 40 60 80 collector-emitter saturation voltage v ce (sat) (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) case temperature tc (c) v ce (sat) ? tc common emitter tc = ? 40c 100 0 0 1 2 3 4 5 20 40 60 80 8 20 15 common emitter tc = 25c v ge = 7 v 9 10 0 1 2 3 4 5 100 0 20 40 60 80 8 20 15 common emitter tc = 125c v ge = 7 v 9 10 4 0 ? 40 0 40 80 120 160 1 2 3 i c = 100 a common emitter v ge = 15 v 70 10 30 50 collector current i c (a) gate-emitter voltage v ge (v) i c ? v ge 100 0 0 2 4 6 8 20 40 60 80 common emitter v ce = 5 v tc = 125c ? 40 25 10
GT35J321 2008-03-26 4 1000 0.1 1 10 1000 10000 10 100 1 100 1000 0.1 1 10 1000 10000 10 100 1 100 10 s* 100 s* 10 ms * 1 ms * t f t r t on t off 10 0.01 0 20 50 60 0.1 1 30 40 10 10 0.01 1 10 100 1000 0.1 1 t off t on t r t f 10 1 10 100 1000 100 1000 10000 c res c oes c ies v ce = 300 v 200 100 collector-emitter voltage v ce (v) collector current i c (a) switching time ( s) switching time ? i c collector current i c (a) switching time ( s) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) gate-emitter voltage v ge (v) gate charge q g (nc) v ce, v ge ? q g collector-emitter voltage v ce (v) safe operating area gate resistance r g ( ? ) switching time ? r g collector current i c (a) collector-emitter voltage v ce (v) reverse bias soa common emitter r l = 6 tc = 25c common emitter v ge = 0 v f = 1 mhz tc = 25c common emitter v cc = 300 v i c = 50 a v gg = 15 v tc = 25c common emitter v cc = 300 v r g = 39 v gg = 15 v tc = 25c t j 125c v gg = 20 v r g = 39 * : single non-repetitive pulse tc = 25c curves must be derated linearly with increases in tem p erature. dc operation i c max (continuous) i c max (pulsed) * 500 0 0 80 160 240 400 100 200 300 0 4 12 16 20 320 400 8
GT35J321 2008-03-26 5 1 1 3 5 30 50 10 100 3 5 10 30 50 100 300 500 300 1 3 5 10 30 50 0 4 8 12 16 20 10 30 50 100 300 500 i r r t r r 10 ? 2 10 ? 5 10 ? 3 10 ? 2 10 ? 1 10 0 10 1 10 2 10 ? 1 10 0 10 1 10 2 10 ? 4 10 ? 3 50 0 25 50 75 100 125 150 10 20 30 40 forward voltage v f (v) i f ? v f forward current i f (a) peak reverse recovery current i rr (a) reverse voltage v r (v) reverse recovery time t rr (ns) i rr , t rr ? i f forward current i f (a) case temperature tc (c) i c max ? tc maximum dc collector current i c max (a) pulse width t w (s) r th (t) ? t w transient thermal impedance r th (t) (c/w) junction capacitance c j (pf) c j ? v r tc = 125c 25 common emitter v ge = 0 v ? 40 0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 common emitter di/dt = ? 100 a/ s v ge = 0 v tc = 25c f = 1 mhz tc = 25c common emitter v ge = 15 v diode stage tc = 25c igbt stage di/dt (a/ s) reverse recovery time t rr (ns) i rr , t rr ? di/dt 0 10 8 6 4 2 0 40 120 160 200 common collector i f = 15 a tc = 25c i r r t r r 80 peak reverse recovery current i rr (a) 200 0 100
GT35J321 2008-03-26 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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